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PSC1065B1-Q - 10A SiC Schottky diode

General Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications.

Key Features

  • Zero forward and reverse recovery.
  • Temperature independent fast and smooth switching performance.
  • Outstanding figure-of-merit (Qc x VF).
  • High IFSM capability.
  • High power density.
  • Reduced system costs.
  • System miniaturization.
  • Reduced EMI.
  • Qualified according to AEC-Q101 in SMD package with epoxy mold compound and recommended for use in automotive.

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Other Datasheets by Nexperia

Part Number Description
PSC1065B1 10A SiC Schottky diode
PSC1065H 10A SiC Schottky diode
PSC1065H-Q 10A SiC Schottky diode
PSC1065J-Q 650V 10A SiC Schottky diode
PSC1065K 10A SiC Schottky diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSC1065B1-Q PSC1065B1-Q 650 V, 10 A SiC Schottky diode in bare die for automotive applications 14 June 2024 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turnoff, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF) and improves the robustness expressed in a high IFSM. 2.