• Part: PSC1065B1-Q
  • Description: 10A SiC Schottky diode
  • Category: Diode
  • Manufacturer: Nexperia
  • Size: 229.38 KB
Download PSC1065B1-Q Datasheet PDF
Nexperia
PSC1065B1-Q
description Nexperia introduces leading edge Silicon Carbide (Si C) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged Pi N Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turnoff, zero recovery switching behavior bined with an outstanding figure-of-merit (QC x VF) and improves the robustness expressed in a high IFSM. 2. Features and benefits - Zero forward and reverse recovery - Temperature independent fast and smooth switching performance - Outstanding figure-of-merit (Qc x VF) - High IFSM capability - High power density - Reduced system costs - System miniaturization - Reduced EMI - Qualified according to AEC-Q101 in SMD package with epoxy mold pound and remended for use in automotive applications 3. Applications - Traction inverter - DC-DC converter - Onboard charger 4. Quick reference data Table 1. Quick reference data Symbol Parameter DC blocking...