PSC1065J-Q - 650V 10A SiC Schottky diode

Nexperia

General Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications.

Key Features

Reduced system costs.
Temperature independent fast and smooth switching performance.
Outstanding figure-of-merit (Qc x VF).
High IFSM capability.
High power density.
System miniaturization.
Reduced EMI.
Qualified according to AEC-Q101 and recommended for use in automotive.

📥 Download Datasheet

PSC1065J-Q 650v 10a sic schottky diode by Nexperia - Datasheet Preview

Datasheet Details

Part number	PSC1065J-Q
Manufacturer	Nexperia
File Size	256.75 KB
Description	650V 10A SiC Schottky diode
Datasheet	PSC1065J-Q Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
PSC126-7iR	6...12 A Switching Regulators	Power-One
PSC128-7iR	6...12 A Switching Regulators	Power-One
PSC128-7iR	Positive Switching Regulators	Power-One AG
PSC128-7iR	Positive Switching Regulators	Melcher AG
PSC129-2	6...12 A Switching Regulators	Power-One

Other Datasheets by Nexperia

Part Number	Description
PSC1065B1	10A SiC Schottky diode
PSC1065B1-Q	10A SiC Schottky diode
PSC1065H	10A SiC Schottky diode
PSC1065H-Q	10A SiC Schottky diode
PSC1065K	10A SiC Schottky diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PSC1065J-Q 650 V, 10 A SiC Schottky diode in D2PAK R2P for automotive applications 7 March 2025 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. 2.