PSC1065H-Q
description
Nexperia introduces leading edge Silicon Carbide (Si C) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The Si C Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior bined with an outstanding figure-of-merit (QC x VF). The Merged Pi N Schottky (MPS) diode improves the robustness expressed in a high IFSM.
2. Features and benefits
- Reduced system costs
- Temperature independent fast and smooth switching performance
- Outstanding figure-of-merit (Qc x VF)
- High IFSM capability
- High power density
- System miniaturization
- Reduced EMI
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
- Traction inverter
- DC-DC converter
- Onboard charger
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
DC blocking...
