PSC1065K Description
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. The product offers temperature independent capacitive turn-off, zero recovery switching behavior bined with an outstanding figure-of-merit (QC x VF).
PSC1065K Key Features
- Zero forward and reverse recovery
- Temperature independent fast and smooth switching performance
- Outstanding figure-of-merit (Qc x VF)
- High IFSM capability
- High power density
- Reduced system costs
- System miniaturization
- Reduced EMI