onsemi 2N3772
High Power NPN Silicon Power Transistors
| Part No. | 2N3772 |
|---|---|
| Datasheet | 2N3772 Download |
| Manufacturer |  onsemi |
| Description | High Power NPN Silicon Power Transistors |
| Buy | Stock & Price |
FEATURES
● Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772● These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(Note 1) Rating Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Peak Symbol 2N3771 VCEO 40 VCEX 50 VCB 50 VEB 5.0 IC 30 30 2N3772 60 80 100 7.0 20 30 Unit Vdc Vdc Vdc Vdc Adc Base Current − Continuous Peak IB 7.5 5.0 Adc 15 15 Total Device Dissipation @ TC = 25°C PD Derate above 25°C 150 0.855 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 1.17 °C/W Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC registered data.
