onsemi 2N7002T
N-Channel FET
| Part No. | 2N7002T |
|---|---|
| Datasheet | 2N7002T Download |
| Manufacturer |  onsemi |
| Description | N-Channel FET |
| Buy | Stock & Price |
FEATURES
● Low On−Resistance● Low Gate Threshold Voltage
● Low Input Capacitance
● Fast Switching Speed
● Low Input/Output Leakage
● Ultra−Small Surface Mount Package
● This Device is Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Drain−Gate Voltage RGS ≤ 1.0 MW Gate−Source Voltage Continuous Pulsed VDSS 60 V VDGR 60 V VGSS V ±20 ±40 Gate−Source Voltage Continuous Continuous at 100°C Pulsed ID mA 115 73 800 Junction Temperature Range Storage Temperature Range TJ 150 °C TSTG −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Max Unit Total Device Dissipation Derating above TA = 25°C PD 200 mW 1.6 mW/°C Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 625 °C/W 1.
