onsemi RFP50N06
N-Channel 60V 50A Power MOSFET
| Part No. | RFP50N06 |
|---|---|
| Datasheet | RFP50N06 Download |
| Manufacturer |  onsemi |
| Description | N-Channel 60V 50A Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 50 A, 60 V● rDS(ON) = 0.022 W
● Temperature Compensating PSPICEt Model
● Peak Current vs. Pulse Width Curve
● UIS Rating Curve
● 175°C Operating Temperature
● This Device is Pb−Free and is RoHS Compliant Specifications
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specifieded) Symbol Parameter Rating Unit VDSS VDGR Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20 kW) (Note 1) 60 V 60 V VGS Gate to Source Voltage ±20 V ID Drain Current Continuous (Figure 2) 50 A IDM Pulsed (Figure 5) EAS Pulsed Avalanche Rating (Figure 6) PD Power Dissipation Linear Derating Factor 131 0.877 W W/°C TJ, TSTG TL Operating and Storage Temperature Maximum Temperature for Soldering Leads at 0.063 inch (1.6 mm) from Case for 10 s −55 to 175 °C 300 °C Tpkg Maximum Temperature for Soldering Package Body for 10 s, see Techbrief 334 260 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
