Datasheet Details
| Part number | RFP50N06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 225.63 KB |
| Description | N-Channel MOSFET |
| Datasheet | RFP50N06-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | RFP50N06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 225.63 KB |
| Description | N-Channel MOSFET |
| Datasheet | RFP50N06-INCHANGE.pdf |
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·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in applications such as swithing Regulators,switching convertes, motor drivers and Relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID PD Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Power Dissipation @TC=25℃ Tj Max.
Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V ±20 V 50 A 131 W -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 62 ℃/W RFP50N06 isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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RFP50N06 | N-Channel MOSFET | Fairchild Semiconductor |
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RFP50N06 | N-Channel MOSFET | Intersil Corporation |
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RFP50N06 | Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs | Harris |
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RFP50N06 | N-Channel Power MOSFET | ON Semiconductor |
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RFP50N06LE | N-Channel MOSFET | Intersil Corporation |
| Part Number | Description |
|---|---|
| RFP25N05 | N-Channel MOSFET |
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| RFP70N06 | N-Channel MOSFET |