RFP50N06LE Datasheet | Intersil

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49164. Features - 50A, 60V - r DS(ON) = 0.022Ω - Temperature pensating PSPICE® Model - Peak Current vs Pulse Width Curve - UIS Rating Curve - 175o C Operating Temperature - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Ordering Information PART NUMBER RFG50N06LE RFP50N06LE RF1S50N06LESM PACKAGE TO-247 TO-220AB TO-263AB BRAND FG50N06L FP50N06L F50N06LE Symbol NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06LESM9A. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of Micro Sim Corporation. .intersil. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFG50N06LE, RFP50N06LE,...