RFP50N06 Datasheet | Fairchild Semiconductor

Data Sheet September 2013 N-Channel Power MOSFET 60V, 50A, 22 mΩ These N-Channel power MOSFETs are manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49018. Ordering Information PART NUMBER RFP50N06 PACKAGE TO-220AB BRAND RFP50N06 Features - 50A, 60V - r DS(ON) = 0.022Ω - Temperature pensating PSPICE® Model - Peak Current vs Pulse Width Curve - UIS Rating Curve - 175o C Operating Temperature Symbol Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2002 Fairchild Semiconductor Corporation RFP50N06 Rev....