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RFP50N06 - Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

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Part number RFP50N06
Manufacturer Harris
File Size 77.46 KB
Description Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
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Description

Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process.This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.These transistors

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