RFP50N06 Datasheet | Harris

SEMICONDUCTOR RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM December 1995 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features - 50A, 60V - r DS(ON) = 0.022Ω - Temperature pensating PSPICE Model - Peak Current vs Pulse Width Curve - UIS Rating Curve - +175o C Operating Temperature Description Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE PART NUMBER PACKAGE BRAND RFG50N06 TO-247 RFG50N06 TO-220AB RF1S50N06 TO-262AA...