RFP50N06 Description
MOSFET Power, N-Channel 60 V, 50 A, 22 mW RFP50N06 These N−Channel power MOSFETs are manufactured using the MegaFET process.
RFP50N06 Key Features
- 50 A, 60 V
- rDS(ON) = 0.022 W
- Temperature pensating PSPICEt Model
- Peak Current vs. Pulse Width Curve
- UIS Rating Curve
- 175°C Operating Temperature
- This Device is Pb-Free and is RoHS pliant