onsemi SS8550
PNP Epitaxial Silicon Transistor
| Part No. | SS8550 |
|---|---|
| Datasheet | SS8550 Download |
| Manufacturer |  onsemi |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation● Complementary to SS8050
● Collector Current: IC = 1.5 A
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Base Voltage VCBO −40 V Collector−Emitter Voltage VCEO −25 V Emitter−Base Voltage VEBO −6 V Collector Current IC −1.5 A Junction Temperature TJ 150 °C Storage Temperature TSTG −65 to 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Power Dissipation Power Dissipation Derate Above 25°C Thermal Resistance, Junction−to−Ambient PD PD RqJA 1 W 8 mW/°C 125 °C/W 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
