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PE2606 - Power MOSFET

General Description

The PE2606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge.

The complementary MOSFET may be used in power inverters, and other applications.

Key Features

  • N-Channel VDS = 20V,ID = 6.8A RDS(ON) < 21mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V.
  • P-Channel VDS = -20V,ID = -7A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-2.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package PE2606 N-channel P-channel Schematic diagram Marking and pin Assignment SOP-8 top view.

📥 Download Datasheet

Datasheet Details

Part number PE2606
Manufacturer semi one
File Size 2.46 MB
Description Power MOSFET
Datasheet download datasheet PE2606 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DESCRIPTION The PE2606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES ●N-Channel VDS = 20V,ID = 6.8A RDS(ON) < 21mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V ●P-Channel VDS = -20V,ID = -7A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-2.