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PE60P25K - P-Channel Enhancement Mode Power MOSFET

General Description

The PE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Key Features

  • VDS =-60V,ID =-25A RDS(ON).

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Datasheet Details

Part number PE60P25K
Manufacturer semi one
File Size 725.16 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE60P25K Datasheet

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P-Channel Enhancement Mode Power MOSFET Description The PE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.