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PE8590 - N-Channel Enhancement Mode Power MOSFET

General Description

The PE8590 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Key Features

  • VDS=85V; ID=92A@ VGS=10V; RDS(ON).

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Datasheet Details

Part number PE8590
Manufacturer semi one
File Size 1.71 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8590 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Trench Power MOSFET General Description The PE8590 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=85V; ID=92A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 64V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply PE8590 Schematic Diagram To-220 Top View Table 1.