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PED3018MAT - N-Channel Enhancement Mode Power MOSFET

General Description

The PED3018MAT uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 30V, ID = 80A RDS(ON) < 3.8mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PED3018MAT
Manufacturer semi one
File Size 362.01 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED3018MAT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The PED3018MAT uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 30V, ID = 80A RDS(ON) < 3.8mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery management ● Motor controller and driver ● PWM applications ● Load switch PED3018MAT Schematic diagram Marking and pin assignment PDFN3.3x3.