PED3018MAT Datasheet | semi one

Description The PED3018MAT uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 30V, ID = 80A RDS(ON) < 3.8mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Battery management - Motor controller and driver - PWM applications - Load switch Schematic diagram Marking and pin assignment PDFN3.3x3.3-8L Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Sigle Pulsed Avalanche Energy (L=0.1m H) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID IDM PD EAS TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Case RθJC Rating 30 ±20 80 51 320 66 135 -55 To 150 Unit V V A A A W m J ℃ ℃/W .semi-one. Page 1 2023 Aug. v1.1 Electrical Characteristics (TC=25℃ unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note 4) Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 4) Gate Resistance Switching Characteristics Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol Condition Min Typ Max...