PED30H10G - N-Channel Enhancement Mode Power MOSFET

semi one

General Description

The PED30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =30V,ID =100A RDS(ON).

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PED30H10G n-channel enhancement mode power mosfet by semi one - Datasheet Preview

Datasheet Details

Part number	PED30H10G
Manufacturer	semi one
File Size	848.26 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED30H10G Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The PED30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <5.