PED30H10G - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PED30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =100A RDS(ON).

semi one

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Datasheet Details

Part number	PED30H10G
Manufacturer	semi one
File Size	848.26 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED30H10G Datasheet
Additional preview pages of the PED30H10G datasheet.

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N-Channel Enhancement Mode Power MOSFET Description The PED30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <5.

Published: Dec 3, 2018 |