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PED3310M - N-Channel Enhancement Mode Power MOSFET

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semi one

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PED3310M N-Channel Enhancement Mode Power MOSFET by semi one - Datasheet Preview — Datasheet preview – PED3310M

Datasheet Details

Part number	PED3310M
Manufacturer	semi one
File Size	1.33 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED3310M Datasheet
Additional preview pages of the PED3310M datasheet.

Product details

Description

The PED3310M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Dec 3, 2018 |