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PED3310M - N-Channel Enhancement Mode Power MOSFET

General Description

The PED3310M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

Key Features

  • VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PED3310M
Manufacturer semi one
File Size 1.33 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED3310M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PED3310M N-Channel Enhancement Mode Power MOSFET Description The PED3310M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features ● VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM application ● Load switch Schematic diagram PDFN3.3x3.