PED3025
PED3025 is N-Channel Enhancement Mode Power MOSFET manufactured by semi one.
Description
The PED3025 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V
Schematic diagram
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- SMPS and general purpose applications
- Hard switched and high frequency circuits
- Uninterruptible power supply
Marking and pin Assignment
DFN 3x3 EP top view
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain...
