Part PED3312M
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 612.64 KB
semi one
PED3312M

Overview

The PED3312M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

  • VDS = 18V, ID = 22 A RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V RDS(ON) < 5.0mΩ @ VGS=3.0V RDS(ON) < 6.8mΩ @ VGS=2.5V ESD Rating: 4000V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package