PED3312M Datasheet | semi one

Description The PED3312M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features - VDS = 18V, ID = 22 A RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V RDS(ON) < 5.0mΩ @ VGS=3.0V RDS(ON) < 6.8mΩ @ VGS=2.5V ESD Rating: 4000V HBM - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - PWM applications - Load switch - Power management Schematic diagram Marking DFN3x3-8L Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Drain Current-Continuous Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TA=25℃ TA=70℃ L=0.1m H TA=25℃ TA=70℃ Symbol VDS VGS IDM IAS EAS PD TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) RθJA Rating 18 ±12 22 16 80 33 54 3.6 2.4 -55 To 150 Unit A m J W ℃ ℃/W .semi-one. Page 1 2020 Jun....