Datasheet4U Logo Datasheet4U.com

PED3312M - N-Channel Enhancement Mode Power MOSFET

Description

The PED3312M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Features

  • VDS = 18V, ID = 22 A RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V RDS(ON) < 5.0mΩ @ VGS=3.0V RDS(ON) < 6.8mΩ @ VGS=2.5V ESD Rating: 4000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number PED3312M
Manufacturer semi one
File Size 612.64 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED3312M Datasheet

📁 Similar Datasheet

  • PED3008MA - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED30D12M - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED30P09M - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED2015M - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED20D09M - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED2310L - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED2310N - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED2311DN - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED2420 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED645K - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
Other Datasheets by semi one
  • PED3310M - N-Channel Enhancement Mode Power MOSFET
  • PED3018MAT - N-Channel Enhancement Mode Power MOSFET
  • PED3025 - N-Channel Enhancement Mode Power MOSFET
  • PED305 - P-Channel Enhancement Mode Power MOSFET
  • PED30H10G - N-Channel Enhancement Mode Power MOSFET
  • PED30H15 - N-Channel Enhancement Mode Power MOSFET
  • PED2023 - P-Channel Enhancement Mode Power MOSFET
  • PED2310F - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
N-Channel Enhancement Mode Power MOSFET Description The PED3312M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features ● VDS = 18V, ID = 22 A RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V RDS(ON) < 5.0mΩ @ VGS=3.0V RDS(ON) < 6.8mΩ @ VGS=2.
Published: |