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PED505 - P-Channel Enhancement Mode Power MOSFET

General Description

The PED505 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -12V,ID = -5.0A RDS(ON) < 52mΩ @ VGS=-4.5V RDS(ON).

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Datasheet Details

Part number PED505
Manufacturer semi one
File Size 1.10 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED505 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PED505 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PED505 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Bottom Drain Contact D1 6D D2 5D GENERAL FEATURES ● VDS = -12V,ID = -5.0A RDS(ON) < 52mΩ @ VGS=-4.5V RDS(ON) <70mΩ @ VGS=-2.