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PED2023 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PED2023 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -3.2A RDS(ON) = 68 m Ω @ VGS=-4.5V RDS(ON) = 95 m Ω @ VGS=-2.5V RDS(ON) = 140mΩ @ VGS=-1.8V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package S1 11 G1 22 D2 33 66 D1 55 G2 44 S2 Schematic diagram PIN 1 S1 G1 D2 D1 D2.

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Datasheet preview – PED2023

Datasheet Details

Part number PED2023
Manufacturer semi one
File Size 224.93 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED2023 Datasheet
Additional preview pages of the PED2023 datasheet.

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Full PDF Text Transcription

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PED2023 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PED2023 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3.2A RDS(ON) = 68 m Ω @ VGS=-4.5V RDS(ON) = 95 m Ω @ VGS=-2.5V RDS(ON) = 140mΩ @ VGS=-1.
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