PED2023
PED2023 is P-Channel Enhancement Mode Power MOSFET manufactured by semi one.
DESCRIPTION
The PED2023 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
- VDS = -20V,ID = -3.2A RDS(ON) = 68 m Ω @ VGS=-4.5V RDS(ON) = 95 m Ω @ VGS=-2.5V RDS(ON) = 140mΩ @ VGS=-1.8V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
S1 11 G1 22 D2 33
66 D1 55 G2 44 S2
Schematic diagram
PIN 1 S1 G1 D2
D1 D2
Application
- PWM applications
- Load switch
- Power management
D1 G2 S2
DFN2X2-6L top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20 ±12...
