The 10N60B is a N-CHANNEL MOSFET.
| Part Number | 10N60B Datasheet |
|---|---|
| Manufacturer | CHONGQING PINGYANG |
| Overview |
10N60(F,B,H)
10A mps,600 Volts N-CHANNEL MOSFET
FEATURE
10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220.
* 10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A * Low gate charge * Low Ciss * Fast switching * 100% avalanche tested * Improved dv/dt capability TO-220AB 10N60 ITO-220AB 10N60F TO-263 10N60B TO-262 10N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gat. |
| Part Number | 10N60B Datasheet |
|---|---|
| Description | 600V N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially ta.
* * * * * * 10A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! * ◀ ▲ * * G! TO-3P G DS SSH Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TST. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| 10N60 | Inchange Semiconductor | N-Channel Mosfet Transistor |
| 10N60C | Fairchild Semiconductor | 600V N-Channel MOSFET |
| 10N60 | Nell Power Semiconductor | N-Channel Power MOSFET |
| 10N60 | Unisonic Technologies | N-CHANNEL POWER MOSFET |
| 10N60M2 | STMicroelectronics | N-channel Power MOSFET |
| 10N60NZ | Fairchild Semiconductor | N-Channel MOSFET |
| 10N60A | Fairchild Semiconductor | Advanced Power MOSFET |