Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V.
- Low gate charge ( typical 44 nC).
- Low Crss ( typical 18 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability
D
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GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
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S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Cur.
10N60C Datasheet
