10N60C Key Features
- 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
- Low gate charge ( typical 44 nC)
- Low Crss ( typical 18 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: 10N60C
- Description: 600V N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 870.91 KB
Other 10N60C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nell Power Semiconductor |
10N60 | N-Channel Power MOSFET |
Inchange Semiconductor |
10N60 | N-Channel Mosfet Transistor |
Unisonic Technologies |
10N60 | N-CHANNEL POWER MOSFET |
| CHONGQING PINGYANG CHONGQING PINGYANG |
10N60 | N-CHANNEL MOSFET |
Unisonic Technologies |
10N60-HC | N-CHANNEL MOSFET |