10N60C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
- Low gate charge ( typical 44 nC)
- Low Crss ( typical 18 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability D ! GDS TO-220 FQP Series GD S TO-220F FQPF Series G!
