| Part Number | 10N65F Datasheet |
|---|---|
| Manufacturer | CHONGQING PINGYANG |
| Overview |
10N65(F,B,H)
10A mps,650 Volts N-CHANNEL MOSFET
FEATURE
10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220.
* 10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A * Low gate charge * Low Ciss * Fast switching * 100% avalanche tested * Improved dv/dt capability TO-220AB 10N65 ITO-220AB 10N65F TO-263 10N65B TO-262 10N65H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gat. |
10N65F Datasheet and Specifications PDF
The 10N65F is a N-CHANNEL MOSFET.
| Part Number | 10N65F Datasheet |
|---|---|
| Description | 650V N-Channel Enhancement Mode MOSFET |
| Manufacturer | EVVO |
| Overview | The 10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. VDS = 650V ID =10A RDS(ON) < 0.9Ω @ VGS=10V （Type：0.75Ω） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value TO-220F TO-220 VDSS Drain-Source Voltage (VGS = 0V) 650 ID Continuous Drain Cur. |
| Part Number | 10N65F Datasheet |
|---|---|
| Description | GaN Enhancement-mode Power Transistor |
| Manufacturer | tokmas |
| Overview |
650V GaN-on-Silicon Enhancement-mode Power Transistor in TO220F-3L Package
Features
• Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency • No reverse-recovery cha.
* Enhancement-mode transistor - normally-OFF power switch * Ultra-high switching frequency * No reverse-recovery charge * Low gate charge, low output charge * Qualified for industrial applications according to JEDEC standards * ESD safeguard * RoHS, Pb-free Applications * AC-DC converters * DC-DC c. |