| Part Number | 13007 |
|---|---|
| Manufacturer | Trea Sure Star |
| Overview |
13007
NPN Silicon Transistor
High Voltage Switch Mode Application
Features
� High Speed Switching � Suitable for Electronic Ballast and Switching Regulator � Case:TO-220AB
Absolute Maximum Ratings (Ta.
* High Speed Switching * Suitable for Electronic Ballast and Switching Regulator * Case:TO-220AB Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) 13007 DRAWING 1.Base 2.Collector 3.Emitter Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltag. |
13007 Datasheet
The 13007 is a NPN Silicon Transistor.
| Part Number | 13007 |
|---|---|
| Description | NPN Epitaxial Silicon Transistor |
| Manufacturer | Elite |
| Overview | 13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=80W Absolute Maximum Ratings (TA=25oC) Characteristi. C=2A VCE=5V, IC=5A IC=2A, IB=0.4A IC=5A, IB=1A IC=8A, IB=2A IC=2A, IB=0.4A IC=5A, IB=1A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=5A 1B1=-1B2=1A RL=50 Min Typ Max Unit 400 V 1 mA 8 60 5 30 1V 2V 3V 1.2 V 1.6 V 110 pF 4 MHz 1.6 µS 3 µS 0.7 µS Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F. |
| Part Number | 13007 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Micro Electronics |
| Overview |
ELECTRONICS
MICRO 13007
1. FEATURES:
■ High Voltage Capability ■ High Speed Switching ■ Wide SOA
TO-220F
1 2 3
TO-220
1 2 3 3
2.APPLICATION:
1:B 2:C 3:E
■ Fluorescent Lamp
■ Electronic Ballast.
* High Voltage Capability * High Speed Switching * Wide SOA TO-220F 1 2 3 TO-220 1 2 3 3 2.APPLICATION: 1:B 2:C 3:E * Fluorescent Lamp * Electronic Ballast * Switch mode power supply * Eletronic Transformer 3. ABSOLUTE MAXIMUM RATINGS(Ta=25℃,unless otherwise specified) Parameter Symbol V. |
| Part Number | 13007 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Jiangsu Changjiang |
| Overview | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR NPN FEATURES Power dissipation PCM : 2 W Collector current ICM: 8 . Power dissipation PCM : 2 W Collector current www.DataSheet4U.com ICM: 8 A Collector-base voltage Tamb=25 V(BR)CBO : 700 V Operating and storage junction temperature range TJ Tstg: -55 to +150 TO 220 1.BASE 2.COLLECTOR 3.EMITTER 123 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specif. |