| Part Number | 2N3741 Datasheet |
|---|---|
| Manufacturer | Microsemi |
| Overview |
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, satura.
* * * * Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Complementary to NPN 2N3767 (2N3741) Medium Power PNP Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process.. |