2N3867 Datasheet and Specifications PDF

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arly 5.71mW/°C for TA > +25°C 2/ Derate linearly 57.1mW/°C for TC > +25°C Unit Vdc Vdc Vdc mAdc W/°C °C Unit °C/mW ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Current IC = 10μAdc 2N3867, S 2N3868, S.

The CENTRAL SEMICONDUCTOR 2N3867 is a silicon PNP power transistor designed for high speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-5 CASE MAXIMUM RATINGS: (TC=25°C unless.

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2N3867, 2N3867S & 2N3868, 2N3868S PNP Silicon Low Power Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/350 • TO-5 Package: 2N3867, 2N3868 • TO-39 Package: 2N3867S, 2N3868S • D.

* Available in JAN, JANTX, JANTXV per MIL-PRF-19500/350
* TO-5 Package: 2N3867, 2N3868
* TO-39 Package: 2N3867S, 2N3868S
* Designed for High Speed Switching and Amplifier Applications Rev. V3 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Mi.

2N3867, 2N3867S & 2N3868, 2N3868S PNP Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF-19500/545  TO-5 Package: 2N3867, 2N3868  TO-39 (TO-205AD) Package: 2N3867S, 2N38.

* Available in JAN, JANTX, JANTXV per MIL-PRF-19500/545
* TO-5 Package: 2N3867, 2N3868
* TO-39 (TO-205AD) Package: 2N3867S, 2N3868S Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Test Conditions IC = 100 µ.