| Part Number | 2N5664 |
|---|---|
| Manufacturer | UNITRODE |
| Overview | . . |
2N5664 Datasheet
The 2N5664 is a Power Transistor.
| Part Number | 2N5664 |
|---|---|
| Description | NPN POWER SILICON SWITCHING TRANSISTOR |
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 Devices 2N5664 2N5665 Qualified Level JAN JANTX JANTXV Devices 2N5666 2N5666S 2N5667 2N5667S Qualified Level JAN J. unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Emitter Cutoff Current VCE = 200 Vdc VCE = 300 Vdc 2N5664, 2N5666, S 2N5665, 2N5667, S V(BR)CER 250 400 6.0 0.2 0. |
| Part Number | 2N5664 |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | SavantIC |
| Overview | ·With TO-66 package ·High breakdown voltage APPLICATIONS ·High speed switching and linear amplifier ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stages and high f. duct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2N5664 IC=10mA ; IB=0 2N5665 IE=10µA ; IC=0 IC=3A; IB=0.3A CONDITIONS SYMBOL 2N5664 2N5665 MIN 200 TYP. MAX UNIT V(BR)CEO V 300 6 V V(BR)EBO Emitt. |
| Part Number | 2N5664 |
|---|---|
| Description | NPN High Voltage Power Silicon Transistor |
| Manufacturer | VPT Components |
| Overview |
2N5664, 2N5665, 2N5666, 2N5667
NPN High Voltage Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/455
• 2N5664 and 2N5665 available in TO-66 packag.
* Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/455 * 2N5664 and 2N5665 available in TO-66 package * 2N5666 and 2N5667 are available in both TO-5 and TO-39 packages * 2N5666 is available in the surface mount U3 version Rev. V1 Electrical Characteristics (TA = +25oC unless other. |