2N6609 Datasheet and Specifications PDF

NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other .

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*Free Packages are Available** High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Dist.

Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

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2N3773, 6609 Complementary Power Transistors The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators, solen.

* High Power Dissipation PD = 150W (TC = 25°C).
* High DC Current Gain and Low Saturation Voltage hFE = 15 - 60 at IC = 8A, VCE = 4V VCE(SAT) = 1.4V (Maximum) at IC = 8A, IB = 0.8A. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 .

The 2N6609 is a silicon PNP power transistors in a TO−3 type package designed for high power audio, disk head positioners, and other linear applications. It can also be used in power switching circui.

D High Safe Operating Area 150W @ 100V D Completely Characterized for Linear Operation D High DC Current Gain and Low Saturation Voltage: hFE = 15 (Min) @ 8A, 4V VCE(sat) = 1.4V (Max) @ IC = 8A, IB = 0.8A Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector
*Emitter Voltage,.