| Part Number | 2N7002L |
|---|---|
| Manufacturer | onsemi |
| Overview |
DATA SHEET
MOSFET – N-Channel, Small Signal, SOT-23
60 V, 115 mA
2N7002L, 2V7002L
V(BR)DSS 60 V
RDS(on) MAX 7.5 W @ 10 V,
500 mA
N−Channel 3
ID MAX 115 mA
Features
• 2V Prefix for .
* 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC *Q101 Qualified and PPAP Capable (2V7002L) * These Devices are Pb *Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain *Source Voltage Drain *Gat. |
2N7002L Datasheet
The 2N7002L is a N-Channel MOSFET.
| Part Number | 2N7002L |
|---|---|
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and f.
* High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability * Very Low Capacitance * Fast Switching Speed Description This N-channel enhancement mode field effect transistor is produced using high cell density, trenc. |
| Part Number | 2N7002L |
|---|---|
| Description | Small signal MOSFET |
| Manufacturer | ARTS CHIP |
| Overview | 2N7002L Small signal MOSFET 60V, 115mA, N-Channel SOT-23 Features Pb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS Drain-Gate Voltage (RGS=1.0. Pb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS Drain-Gate Voltage (RGS=1.0MΩ) VDGR 60 60 Vdc Vdc Drain Current -Continuous TC=25 TC=100 -Pulsed (Note 2) (Note 1) (Note 1) ID ID IDM ±115 ±75 ±800 mAdc Gate-Source Voltage -Continuous . |
| Part Number | 2N7002L |
|---|---|
| Description | N-CHANNEL MOSFET |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 2N7002L uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
.
* RDS(ON) = 7.5Ω @VGS = 10 V * Low Reverse Transfer Capacitance ( CRSS = typical 5 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
* SYMBOL 3. Drain 3 1 2 SOT-23-3 (JEDEC TO-236) 2.Gate 1.Source * ORDERING INFORMATION Ordering Number 2N. |