| Part Number | 2SB1184 Datasheet |
|---|---|
| Manufacturer | Micro Commercial Components |
| Overview |
6%
Features
• Low Collector Saturation Voltage • Execllent Current-to-Gain Characteristics • Halogen Free*UHHQ'HYLFH 1RWH • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammabili.
* Low Collector Saturation Voltage * Execllent Current-to-Gain Characteristics * Halogen Free*UHHQ'HYLFH 1RWH * Moisture Sensitivity Level 1 * Epoxy Meets UL 94 V-0 Flammability Rating * Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum . |
2SB1184 Datasheet and Specifications PDF
The 2SB1184 is a PNP Silicon Epitaxial Transistor.
Key Specifications
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SB1184 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | ROHM |
| Overview |
Power Transistor (-60V, -3A)
2SB1184 / 2SB1243
Features
1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
Dimensions (Unit : mm)
2SB1184
6.5±0..
1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
*Dimensions (Unit : mm) 2SB1184 6.5±0.2 5.1 +0.2 *0.1 C0.5 2.3 +0.2 *0.1 0.5±0.1 2SB1243 6.8±0.2 2.5±0.2 1.5±0.3 4.4±0.2 1.0 0.9 1.5 2.5 9.5±0.5 +0.3 *0.1 0.9 5.5 *Structure Epitax. |
| Part Number | 2SB1184 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low VCE(sat) ·Small and slim package ·Complements the 2SD1760/2SD1864 ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation. llector-Base Breakdown Voltage IC= -50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50uA; IC= 0 ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -0.5A; . |
| Part Number | 2SB1184 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | JCET |
| Overview | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1184 TRANSISTOR (PNP) FEATURES z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complem. z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Coll. |