| Part Number | 2SB552 Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·Complement to type 2SD552 APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outl. kdown voltage IC=-25mA ;IB=0 IC=-10A; IB=-1A IC=-10A; IB=-1A VCB=-220V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-1A ; VCE=-10V -180 V Collector-emitter saturation voltage -2.0 V Base-emitter saturation voltage -2.5 V Collector cut-off current -0.1 mA Emitter cut-. |
2SB552 Datasheet and Specifications PDF
The 2SB552 is a SILICON POWER TRANSISTOR.
Key Specifications
| Part Number | 2SB552 Datasheet |
|---|---|
| Description | SILICON PNP TRANSISTOR |
| Manufacturer | Toshiba |
| Overview |
SILICON PNP TRIPLE DIFFUSED TYPE
HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES
• High Collector Power Dissipatio.
* High Collector Power Dissipation * High Collector Current : I C=-15A * High Voltage : VCEO=-180V * Complementary to 2SD552. P C=150W (Tc=25°C) INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collec. |
| Part Number | 2SB552 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD552 ·Minimum Lot-to-Lot variations for robust device performance and. O Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -10A; IB= -1A ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -. |