2SC2618 Datasheet and Specifications PDF

The 2SC2618 is a Silicon NPN Transistor.

Key Specifications

Mount TypeSurface Mount
Pins3
Height1.3 mm
Length2 mm
Width3 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Datasheet4U Logo
Part Number2SC2618 Datasheet
ManufacturerHitachi Semiconductor
Overview 2SC2618 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1121 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2618 Absolute Maximum Ratings (Ta = 25°. r saturation voltage Base to emitter voltage Note: Grade Mark hFE1 VCE(sat) VBE 60 10
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* V V I C = 150 mA, IB = 15 mA (Pulse test) VCE = 3 V, IC = 10 mA (Pulse test) 1. The 2SC2618 is grouped by h FE1 as follows. B RB 60 to 120 C RC 100 to 200 D RD 160 to 320 See characteristic curves of 2SC12.
Part Number2SC2618 Datasheet
DescriptionSilicon NPN Epitaxial Transistor
ManufacturerRenesas
Overview of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th. er voltage VBE
* Note: 1. The 2SC2618 is grouped by hFE1 as follows. Grade C D Mark RC RD hFE1 100 to 200 160 to 320 Typ
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* 0.2 0.64 Max
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* 0.5 320
* 0.6
* Unit V V V μA V V (Ta = 25°C) Test conditions IC = 10 μA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 μA, IC = 0 VCB = 20 V, IC.
Part Number2SC2618 Datasheet
DescriptionSilicon NPN Epitaxial Transistor
ManufacturerKexin Semiconductor
Overview SMD Type Silicon NPN Epitaxial 2SC2618 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 . Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation.

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