2SC3298B Datasheet

The 2SC3298B is a COMPLEMENTARY SILICON POWER TRANSISTORS.

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Part Number2SC3298B
ManufacturerMotorola Semiconductor
Overview . .
Part Number2SC3298B
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·Complement to Type 2SA1306B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . Breakdown Voltage 2SC3298B IC= 10mA; IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 500mA; VCE= 5V ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC Current Gain IC= 100mA .
Part Number2SC3298B
DescriptionSilicon NPN Transistor
ManufacturerToshiba
Overview . .