| Part Number | 2SC3330 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview | Ordering number : EN 1599A 2SA1317/2SC3330 PNP/NPN Epitaxial Planar Silicon Transistors AF Amp Applications . . |
2SC3330 Datasheet and Specifications PDF
The 2SC3330 is a PNP/NPN Epitaxial Planar Silicon Transistors.
| Part Number | 2SC3330 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | JCET |
| Overview |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SC3330 TRANSISTOR (NPN)
FEATURES z Large Current Capacity and Wide ASO
TO – 92S
1. EMITTER 2. COLLECTOR 3. .
z Large Current Capacity and Wide ASO
TO * 92S 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Th. |
| Part Number | 2SC3330 Datasheet |
|---|---|
| Description | NPN Silicon Epitaxial Planar Transistor |
| Manufacturer | SEMTECH |
| Overview | ST 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain. On sp. ase Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA at f=1KHz, RS=500Ω Symbol hFE hFE h. |
| Part Number | 2SC3330 Datasheet |
|---|---|
| Description | NPN Silicon Epitaxial Planar Transistor |
| Manufacturer | CHINA BASE |
| Overview | 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain. On speci. . |