| Part Number | 2SD1047 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
3 2 1
TO-3P
Figure 1. .
* High breakdown voltage VCEO = 140 V * Typical ft = 20 MHz * Fully characterized at 125 oC Application * Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity beh. |
2SD1047 Datasheet PDF
The 2SD1047 is a NPN Transistor.
| Part Number | 2SD1047 Datasheet |
|---|---|
| Description | NPN Triple Diffused Planar Silicon Transistors |
| Manufacturer | SANYO |
| Overview |
in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047.
1 : Base 2 : Collector 3 : Emitter
Specifications
Absolute Maximum Ratin.
* Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). * Wide ASO because of on-chip ballast resistance. * Good depenedence of fT on current and excellent high frequency responce. Package Dimensions unit:mm 2022A [2SB817/2SD1047] The d. |
| Part Number | 2SD1047 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817 ·Minimum Lot-to-Lot variations for r. down Voltage V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base -Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output. |