| Part Number | 2SD1135 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SD1135
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB859
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Rati.
Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance VBE VCE(sat) fT Cob
60 35 * * * * V V MHz pF Notes: 1. The 2SD1135 is grouped by h FE1 as follows. 2. Pu. |
2SD1135 Datasheet and Specifications PDF
The 2SD1135 is a NPN TRANSISTOR.
| Part Number | 2SD1135 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB859 ·Minimum Lot-to-Lot variations for robust device . ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 0.1A; . |
| Part Number | 2SD1135 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Complement to type 2SB859 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute . ollector output capacitance Transition frequency CONDITIONS IC=50mA; RBE=9 IE=10µA; IC=0 IC=2 A;IB=0.2 A IC=1A ; VCE=5V VCB=80V; IE=0 IC=1A ; VCE=5V IC=0.1A ; VCE=5V IC=0; VCB=20V;f=1MHz IC=0.5A ; VCE=5V 60 35 MIN 80 5 2SD1135 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-. |