| Part Number | 2SJ245S Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SJ245(L), 2SJ245(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven fro.
* Low on-resistance * High speed switching * Low drive current * 4 V gate drive device can be driven from 5 V source * Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 23 D 12 3 1. Gate G 2. Drain 3. Source 4. Drain S November 1996 2SJ245(L), 2SJ245(S) Absolute Max. |
2SJ245S Datasheet and Specifications PDF
The 2SJ245S is a Silicon P-Channel MOS FET.
| Part Number | 2SJ245S Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
2SJ245S
2SJ245S Datasheet
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 60
RDS(on) (Ω) 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V
ID (A) - 30 - 25
Qg (Typ) 10
FEATURES • TrenchFET® .
* TrenchFET® Power MOSFET * 100 % UIS Tested APPLICATIONS * Load Switch TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °. |