| Part Number | 4N35M Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
Functional Block Diagram
1
6
2
5
3
NC
.
* UL recognized (File # E90700, Volume 2) * VDE recognized (File # 102497) * Add option V (e.g., 4N25VM) Applications * Power supply regulators * Digital logic inputs * Microprocessor inputs Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a. |
4N35M Datasheet and Specifications PDF
The 4N35M is a Phototransistor Optocoupler.
Key Specifications
| Package | PDIP |
|---|---|
| Mount Type | Through Hole |
| Pins | 6 |
| Height | 6.35 mm |
| Length | 6.35 mm |
| Width | 6.35 mm |
| Max Operating Temp | 100 °C |
| Min Operating Temp | -55 °C |
| Part Number | 4N35M Datasheet |
|---|---|
| Description | Phototransistor Optocouplers |
| Manufacturer | onsemi |
| Overview |
The general purpose optocouplers consist of a gallium arsenide
infrared emitting diode driving a silicon phototransistor in a standard plastic 6−pin dual−in−line package.
Features
• Minimum Current Tr.
* Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V: * 10% for 4N27M and 4N28M * 20% for 4N25M and 4N26M * 100% for 4N35M and 4N36M and 4N37M * Safety and Regulatory Approvals: * UL1577, 4,170 VACRMS for 1 Minute * DIN *EN/IEC60747 *5 *5, 850 V Peak Working Insulation Voltage Applications * Powe. |