| Part Number | 4N65G Datasheet |
|---|---|
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characterist.
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
* SYMBOL Power MOSFET Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-397.P 4N65 Power MOSFET * ORDERING INFORMATION. |
4N65G Datasheet and Specifications PDF
The 4N65G is a N-Channel Power MOSFET.
| Part Number | 4N65G Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | PINGWEI |
| Overview |
4N65(F,B,H,G,D)
4A mps,650 Volts N-CHANNEL MOSFET
FEATURE
4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220A.
* 4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A * Low gate charge * Low Ciss * Fast switching * 100% avalanche tested * Improved dv/dt capability TO-220AB 4N65 ITO-220AB 4N65F TO-262 4N65H TO-263 4N65B TO-252 4N65G TO-251 4N65D Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Dra. |