| Part Number | 8205A Datasheet |
|---|---|
| Manufacturer | RZC Microelectronics |
| Overview | The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is suita. l VDS =20 V l ID =6A l Low on-state resistance Fast switching RDS(on) = 45mΩ (typ.)(VGS = 4.5V, ID = 2.0A) RDS(on) = 48mΩ (typ.)(VGS = 3.85V, ID = 2.0A) RDS(on) = 60mΩ (typ.)(VGS = 2.5V, ID = 2.0A) l Lead free product is acquired l Surface Mount Package APPLICATION l Battery protection l Load sw. |
8205A Datasheet and Specifications PDF
The 8205A is a Dual N-Channel MOSFET.
| Part Number | 8205A Datasheet |
|---|---|
| Description | N-channel power MOSFET |
| Manufacturer | Unknown Manufacturer |
| Overview | N MOSFET 8205A/8205B/8205C 1. N8205A/8205B/ 8205C 、。 8205A/8205B/8205C 。 2. z z z 2.5V z VBDSB=20V z IDB =B 6A @ VGB S=B 4.5V z 8205A ： RDS(ON) B <32m B Ω @ VGB S=B 4.5V z 8205B ：. A 20 - 22 - - 0.03 0.5 0.70 40 1 ±100 V uA nA - V/°C 1.2 V 2 8205A/8205B/8205C （1） RBDS(ON)B （1） （1） （1） gfsB B QgB B QgsB B QgdB B TBd(on)B TrB B TBd(off)B TfB B CissB B CossB B CrssB B VSDB B ISB B VGSB B = 4.5V 8205A IDB = B 4.5A VGSB B = . |
| Part Number | 8205A Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | GOFORD |
| Overview | GOFORD 8205A P R ODUC T S UMMAR Y VDSS RDS(ON) ID @ 4.0V (typ) 20V 21mΩ 4A - D1 D2 G1 G2 S1 S2 F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S urface. S Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b BVDSS VGS =0V, ID =250uA 20 IDSS VDS = 19.5V GS =0V IGSS VGS = 10V,VDS=0V V 1 uA 0.1 uA Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 0.45 1.2 V Drain-S ource On-S tate R esistan. |
| Part Number | 8205A Datasheet |
|---|---|
| Description | Dual N-Channel MOSFET |
| Manufacturer | HSMC |
| Overview |
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
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* RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A * High Density Cell Design for Ultra Low On-Resistance * High Power and Current Handing Capability * Fully Characterized Avalanche Voltage and Current * Ideal for Li ion Battery Pack Applications Applications * Battery Protection * Load. |