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AO4407 Datasheet

The AO4407 is a P-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberAO4407
ManufacturerAlpha & Omega Semiconductors
Overview Product Summary The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection appl. bient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev.14.0: July 2013 www.aosmd.com Page 1 of 5 AO4407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Paramete.
Part NumberAO4407
DescriptionP-Channel MOSFET
ManufacturerFreescale Semiconductor
Overview Freescale AO4407/MC4407A P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat. ource Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD TJ, Tstg Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Case a Maximum Junction-to-Ambient a Symbol RθJC RθJA t <= 5 sec t <= 5 sec Maximum 25 50 Units o.
Part NumberAO4407
DescriptionP-Channel MOSFET
ManufacturerVBsemi
Overview AO4407 AO4407 Datasheet P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.024 at VGS = - 4.5 V ID (A)d - 9.0 - 7.8 Qg (Typ.) 13 nC .
* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested APPLICATIONS
* Load Switch
* Battery Switch S SO-8 S1 S2 S3 G4 Top View 8D 7D 6D 5D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Sourc.
Part NumberAO4407
DescriptionP-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type P-Channel MOSFET AO4407 ■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) ● RDS(ON) ＜ 13mΩ (VGS =-20V) ● RDS(ON) ＜ 14mΩ (VGS =-10V) ● RDS(ON) ＜ 30mΩ (VGS =-5V) SOP-8 D +0.04 0.21 -0.02 .
* VDS (V) =-30V
* ID =-12 A (VGS =-20V)
* RDS(ON) ＜ 13mΩ (VGS =-20V)
* RDS(ON) ＜ 14mΩ (VGS =-10V)
* RDS(ON) ＜ 30mΩ (VGS =-5V) SOP-8 D +0.04 0.21 -0.02 G S MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain
* Absolute Maximum Ratings Ta = 25℃ Parameter Drain-S.

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