| Part Number | APT5010LVFR Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Sourc.
*Drain Current *ID=47A@ TC=25℃ *Drain Source Voltage- : VDSS=500V(Min) *Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and g. |
APT5010LVFR Datasheet and Specifications PDF
The APT5010LVFR is a N-Channel MOSFET.
| Part Number | APT5010LVFR Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Advanced Power Technology |
| Overview | APT5010LVFR 500V 47A 0.100Ω POWER MOS V ® FREDFET TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, in. lts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On S. |