AT28C010 Datasheet and Specifications PDF

The AT28C010 is a 1-Megabit (128K x 8) Paged Parallel Military EEPROM.

Key Specifications

PackagePLCC
Mount TypeSurface Mount
Pins32
Operating Voltage5 V
Max Voltage (typical range)5.5 V
Min Voltage (typical range)4.5 V
Height2.79 mm
Length14.1 mm
Part NumberAT28C010 Datasheet
ManufacturerAtmel
Overview Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128-Bytes – Internal Control Timer • Fast Write Cycle Time – Page Write Cycle Time - .
* Fast Read Access Time - 120 ns
* Automatic Page Write Operation
* Internal Address and Data Latches for 128-Bytes
* Internal Control Timer
* Fast Write Cycle Time
* Page Write Cycle Time - 10 ms Maximum
* 1 to 128-Byte Page Write Operation
* Low Power Dissipation
* 80 mA Active Current
* 300µA CM.
Part NumberAT28C010 Datasheet
Description1-megabit (128K x 8) Paged Parallel EEPROM
ManufacturerAtmel
Overview The AT28C010 is a high-performance electrically-erasable and programmable readonly memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolati.
* Fast Read Access Time
* 120 ns
* Automatic Page Write Operation
* Internal Address and Data Latches for 128 Bytes
* Internal Control Timer
* Fast Write Cycle Time
* Page Write Cycle Time
* 10 ms Maximum
* 1 to 128-byte Page Write Operation
* Low Power Dissipation
* 40 mA Active Current
* 200 µA CM.
Part NumberAT28C010 Datasheet
Description1-Megabit (128K x 8) Paged Parallel EEPROM
ManufacturerMicrochip Technology
Overview 5 3. Description.
* Fast Read Access Time: 120 ns
* Automatic Page Write Operation:
* Internal address and data latches for 128 bytes
* Internal control timer
* Fast Write Cycle Time:
* Page Write cycle time: 10 ms maximum
* 1 to 128-byte Page Write operation
* Low-Power Dissipation:
* 40 mA active current
* 200 µA C.

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