AUIRL1404ZS Datasheet and Specifications PDF

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest D DD processing techniques to achieve extremely low onresistance per silicon area. Additional featur.

l Logic Level l Advanced Process Technology l Ultra Low On-Resistance AUIRL1404ZL HEXFET® Power MOSFET D V(BR)DSS 40V l 175°C Operating Temperature RDS(on) typ. 2.5mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G max. 3.1mΩ lÃID (Silicon Limited) 1.

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t.

* Logic Level
* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power M.