| Part Number | BA779 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz ... 2 GHz • Especially useful as antenna switch in TV-sat tuners • Very low harmon. min. typ. max. DC Characteristics Reverse current VR = 30 V Forward voltage IF = 50 mA IR - - 20 nA VF - - 1.1 V AC Characteristics Diode capacitance CT VR = 0 V, f = 100 MHz VR = 10 V, f = 1 MHz Reverse parallel resistance RP VR = 1 V, f = 100 MHz VR = 0 V, f = 1 GHz Forward re. |
BA779 Datasheet and Specifications PDF
The BA779 is a Silicon PIN Diode.
| Part Number | BA779 Datasheet |
|---|---|
| Description | Silicon PIN Diodes |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon PIN Diodes BA779;BA779S Diodes Features Wide frequency range 10 MHz to 1 GHz +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.1 1.3 -0.1 0.. Wide frequency range 10 MHz to 1 GHz +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.1 0.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Forward Current Junction Temperature Storage tempe. |
| Part Number | BA779 Datasheet |
|---|---|
| Description | Silicon PIN Diodes |
| Manufacturer | Vishay |
| Overview | BA779.BA779S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ra. D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 30 50 1. |