The BC516 is a PNP Darlington Transistor.
| Package | TO-92-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 8.77 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | BC516 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
98AON13879G
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−92 3.
* This Device is Designed for Applications Reguiring Extremely High Current Gain at Currents to 1 A. * This is a Pb *Free Device ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ , TSTG Collector *Emitter Voltage Collecto. |
| Part Number | BC516 Datasheet |
|---|---|
| Description | PNP Darlington Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview |
BC516
BC516
PNP Darlington Transistor
• This device is designed for applications reguiring extremely high current gain at currents to 1mA.
• Sourced from process 61.
Absolute Maximum Ratings TA=25°.
Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product (2)
IC = 100mA, IB = 0.1mA IC = 10mA, VCE = 5V IC = 10mA, VCE = 5V, f = 100MHz
1V 1.4 V 200 MHZ
NOTES: 1. Pulse Test Pulse Width ≤ 2% 2. fT = IhfeI * ftest Thermal Characteristics TA=25°C unless otherwise noted Sy. |
| Part Number | BC516 Datasheet |
|---|---|
| Description | PNP Darlington transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517.
PINNING
PIN 1 2 3
emitter base collector
DESCRIPTION
handbook, halfpage
1 2 3
23
TR1 TR2
1
MAM303
Fig.1 Simpli.
* High current (max. 500 mA) * Low voltage (max. 30 V) * Very high DC current gain (min. 30000). APPLICATIONS * Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517. PINNING PIN 1 2 3 emitter base collector DESCR. |
| Part Number | BC516 Datasheet |
|---|---|
| Description | PNP Silicon Darlington Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | PNP Silicon Darlington Transistor q High current gain q High collector current q Complementary type: BC 517 (NPN) BC 516 2 3 1 Type BC 516 Marking – Ordering Code Q62702-C944 Pin Configuration 12. base breakdown voltage IC = 100 µA Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 20 mA; VCE = 2 V Collector-emitter saturation voltage1) IC = 100 mA; IB = 0.1 mA Base-emitter voltage1) IC = . |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BC5161 | Holtek Semiconductor | 2.4GHz GFSK Transmitter |
| BC5162 | Holtek Semiconductor | 2.4GHz GFSK Transmitter |