BC856S Datasheet and Specifications PDF

The BC856S is a 65V 100mA PNP/PNP general-purpose transistor.

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Part NumberBC856S Datasheet
ManufacturerNexperia
Overview PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector capacitance • Low collector-emitter satur. and benefits
* Low collector capacitance
* Low collector-emitter saturation voltage
* Closely matched current gain
* Reduces number of components and board space
* No mutual interference between the transistors 3. Applications
* General-purpose switching and amplification 4. Quick reference data .
Part NumberBC856S Datasheet
DescriptionPNP General Purpose Double Transistor
ManufacturerKexin Semiconductor
Overview SMD Type Transistors PNP General Purpose Double Transistor KC856S(BC856S) SOT-363 1.3 +0.1 -0.1 Unit: mm 0.65 0.525 Features Reduces number of components and board space No m. Reduces number of components and board space No mutual interference between the transistors. +0.15 2.3-0.15 0.36 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 1 E1 2 B1 3 C2 4 E2 5 B2 6 C1 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Ba.
Part NumberBC856S Datasheet
Description100mA PNP/PNP general-purpose transistor
ManufacturerNXP Semiconductors
Overview PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features I Low collector capacitance I Low collector-emitter saturation voltag. I Low collector capacitance I Low collector-emitter saturation voltage I Closely matched current gain I Reduces number of components and board space I No mutual interference between the transistors 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data Table 1. Qui.
Part NumberBC856S Datasheet
DescriptionPNP Silicon AF Transistor
ManufacturerInfineon
Overview PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistor with good ma. .